PLB16004U Datasheet, PDF (3/12 Pages) NXP Semiconductors – Microwave power transistor

Philips Semiconductors
Microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
R_BE = 0
open base
open collector
T_mb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.3 mm from ceramic.
Product specification
PLB16004U
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
40
40
15
3
0.5
9
+150
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
10
handbook, halfpage
P _tot
(W)
8
MLC457
6
4
2
0
50
0
50
100
150
200
Tmb (^oC)
Fig.2 Power derating curve.
1997 Feb 18
3