PLB16004U Datasheet, PDF (2/12 Pages) NXP Semiconductors – Microwave power transistor

Philips Semiconductors
Microwave power transistor
Product specification
PLB16004U
FEATURES
• Diffused emitter ballasting resistors
improve excellent current sharing
and withstanding a high VSWR
• Interdigitated common-base
structure provides high emitter
efficiency
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching networks allow an
easier design of circuits.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common base class C
narrowband amplifier.
MODE OF
f
V_CC
OPERATION (GHz) (V)
Class C (CW)
1.6
28
P_L
(W)
>4.5
G_p
(dB)
>8.5
η_C
Z_i; Z_L
(%)
(Ω)
>40 see Figs 5
and 6
PINNING - SOT437A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
APPLICATIONS
Intended for use in common-base
class C power amplifiers at 1.6 GHz.
handbook, 4 columns
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with base connected
to flange.
1
Top view
3
2
c
b
e
MAM112
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2