PHP3055E Datasheet, PDF (4/10 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP3055E PHD3055E
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 10 V
100 ^{Peak Pulsed Drain Current, IDM (A)}
RDS(on) = VDS/ ID
10
D.C.
1
tp = 10 us
100 ms
100 us
1 ms
10 ms
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
10 ^{Transient thermal impedance, Zth j-mb (K/W)}
D = 0.5
0.2
1
0.1
0.05
0.02
PD
tp ^{D = tp/T}
0.1
1E-06
single pulse
1E-05
1E-04 1E-03 1E-02
Pulse width, tp (s)
T
1E-01
1E+00
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
15 ^{Drain Current, ID (A)}
14 Tj = 25 C
13
VGS = 10V
12
8V
11
10
7V
9
8
6.5 V
7
6
6V
5
4
5.5 V
3
5V
2
1
4.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.5
5V
5.5V
0.45
0.4
6V
0.35
0.3
6.5 V
0.25
0.2
0.15
Tj = 25 C
7V
8V
0.1
VGS = 10V
0.05
0
0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D)
August 1999
4
Rev 1.200