 English |
|
|
|
|
|
|
|
| PHP3055E Datasheet, PDF (3/10 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
| |||
| ◁ |
Philips Semiconductors
N-channel TrenchMOS⢠transistor
Product specification
PHP3055E PHD3055E
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 10 A; VGS = 0 V
trr
Reverse recovery time
IF = 10 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = 0 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
- 10.3 A
-
- 41 A
- 1.1 1.5 V
- 32 - ns
- 50 - nC
August 1999
3
Rev 1.200
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese