PHP3055E Datasheet, PDF (1/10 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP3055E, PHD3055E
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
g
s
QUICK REFERENCE DATA
V_DSS = 55 V
I_D = 10.3 A
R_DS(ON) ≤ 150 mΩ (V_GS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT428 (DPAK)
PIN
DESCRIPTION
tab
tab
1 gate
2 drain¹
3 source
tab drain
1 23
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 175˚C
T_j = 25 ˚C to 175˚C; R_GS = 20 kΩ
T_mb = 25 ˚C
T_mb = 100 ˚C
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
± 20
10.3
7.3
41
33
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT428 package
August 1999
1
Rev 1.200