PHP1025 Datasheet, PDF (4/8 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Objective specification
PHP1025
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V_(BR)DSS
V_GSth
I_DSS
I_GSS
R_DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
Q_G
total gate charge
Q_GS
gate-source charge
Q_GD
gate-drain charge
Switching times
V_GS = 0; I_D = −10 µA
V_GS = V_DS; I_D = −1 mA
V_GS = 0; V_DS = −9.6 V
V_GS = ±8 V; V_DS = 0
V_GS = −4.5 V; I_D = −5 A
V_GS = −2.5 V; I_D = −5 A
V_GS = −1.8 V; I_D = −2.5 A
V_GS = 0; V_DS = −9.6 V; f = 1 MHz
V_GS = 0; V_DS = −9.6 V; f = 1 MHz
V_GS = 0; V_DS = −9.6 V; f = 1 MHz
V_GS = −6 V; V_DD = −6 V;
I_D = −5 A; T_amb = 25 °C
V_DD = −6 V; I_D = −5 A
T_amb = 25 °C
V_DD = −6 V; I_D = −5 A
T_amb = 25 °C
−12
−0.4
−
−
−
−
−
−
−
−
−
−
−
t_d(on)
t_f
t_on
t_d(off)
t_r
t_off
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
Source-drain diode
V_GS = 0 to −6 V; V_DD = −6 V;
−
I_D = −1 A; R_gen = 6 Ω
−
−
V_GS = −6 to 0 V; V_DD = −6 V;
−
I_D = −1 A; R_gen = 6 Ω
−
−
V_SD
source-drain diode forward voltage V_GD = 0; I_S = −1.25 A
−
t_rr
reverse recovery time
I_S = −1.25 A; di/dt = 100 A/µs
−
TYP.
−
−
−
−
−
−
−
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
−
tbf
MAX.
−
−
−100
±100
23
25
29
−
−
−
−
−
−
−
−
−
−
−
−
−1.3
−
UNIT
V
V
nA
nA
mΩ
mΩ
mΩ
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
ns
ns
V
ns
1998 Feb 18
4