PHP1025 Datasheet, PDF (3/8 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Objective specification
PHP1025
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_DS
V_GSO
I_D
I_DM
P_tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
I_S
source current (DC)
I_SM
peak pulsed source current
CONDITIONS
open drain
T_s = 80 °C; note 1
note 2
T_s = 80 °C
T_amb = 25 °C; note 3
T_amb = 25 °C; note 4
T_s = 80 °C
note 2
MIN.
−
−
−
−
−
−
−
−55
−55
−
−
Notes
1. T_s is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a R_{th a-tp} (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a R_{th a-tp} (ambient to tie-point) of 90 K/W.
MAX.
−12
±8
−10
−40
4
2.78
1.16
+150
+150
UNIT
V
V
A
A
W
W
W
°C
°C
−3
A
−12
A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
VALUE
17.5
UNIT
K/W
1998 Feb 18
3