PHP1025 Datasheet, PDF (2/8 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Objective specification
PHP1025
FEATURES
• Very low R_DSon at low threshold
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc.
APPLICATIONS
• Power management
• DC-DC converters
• General purpose switch.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
DESCRIPTION
1
s
source
2
s
source
3
s
source
4
g
gate
5
d
drain
6
d
drain
7
d
drain
8
d
drain
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin handbook, half₈page
5
d
SOT96-1 (SO8) SMD plastic package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
g
1
4
s
Top view
MAM398
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_DS
V_SD
V_GSO
V_GSth
I_D
R_DSon
P_tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
I_S = −1.25 A; V_GD = 0
open drain
I_D = −1 mA; V_DS = V_GS
T_s = 80 °C
I_D = −5 A; V_GS = −2.5 V
T_s = 80 °C
MIN.
−
−
−
−0.4
−
−
−
MAX.
−12
−1.3
±8
−
−10
25
4
UNIT
V
V
V
V
A
mΩ
W
1998 Feb 18
2