PDTC123JEF Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Preliminary specification
PDTC123JEF
10³
handbook, halfpage
hFE
10²
MDA928
(1) ⁽²⁾
(3)
10
1
10^−1
1
10 _{IC (mA)} 10²
V_CE = 5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10³
handbook, halfpage
VCEsat
(mV)
MDA927
10²
(1)
(2)
(3)
10
10^−1
1
10
10²
IC (mA)
I_C/I_B = 20.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
10
handbook, halfpage
Vi(off)
(V)
1
(1)
(2)
(3)
MDA930
10^−1
10^−2
10^−1
1
10
IC (mA)
V_CE = 5 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
10²
handbook, halfpage
Vi(on)
(V)
10
MDA929
1
(1) ⁽²⁾
(3)
10^−1
10^−1
1
10 _{IC (mA)} 10²
V_CE = 0.3 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 May 27
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