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PDTC123JEF Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor
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Philips Semiconductors
NPN resistor-equipped transistor
Preliminary specification
PDTC123JEF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
IE = 0; VCB = 50 V
IB = 0; VCE = 30 V
IB = 0; VCE = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 10 mA; VCE = 5 V
IC = 5 mA; IB = 0.25 mA
IC = 100 µA; VCE = 5 V
IC = 5 mA; VCE = 0.3 V
−
−
100 nA
−
−
1
µA
−
−
50
µA
−
−
180 µA
100 −
−
−
−
100 mV
−
0.6 0.5 V
1.1 0.75 −
V
1.54 2.2 2.86 kΩ
RR-----21--
resistor ratio
17
21
26
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
−
2.5 pF
1999 May 27
3
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