PDTC114TE Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC114TE
handboo⁶k,⁰h⁰alfpage
(1)
hFE
400
(2)
(3)
200
MGM902
10^−1
handbook, halfpage
VCEsat
(V)
MGM901
(1)
(2)
(3)
0
10^−1
1
10
10²
IC (mA)
V_CE = 5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10^−2
10^−1
1
10
10²
IC (mA)
I_C/I_B = 10.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1998 Aug 03
4