PDTC114TE Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC114TE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_O
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
50
50
5
100
100
150
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
833
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
R1
C_c
collector cut-off current
I_E = 0; V_CB = 50 V
collector cut-off current
I_B = 0; V_CE = 30 V
I_B = 0; V_CE = 30 V; T_j = 150 °C
emitter cut-off current
I_C = 0; V_EB = 5 V
DC current gain
I_C = 1 mA; V_CE = 5 V
collector-emitter saturation voltage I_C = 10 mA; I_B = 0.5 mA
input resistor
collector capacitance
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
MIN.
−
−
−
−
200
−
7
−
TYP.
−
−
−
−
−
−
10
−
MAX.
100
1
50
100
−
150
13
2.5
UNIT
nA
µA
µA
nA
mV
kΩ
pF
1998 Aug 03
3