PDTC114TE Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC114TE
FEATURES
• Built-in bias resistor R1 (typ. 10 kΩ)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of an external resistor.
DESCRIPTION
NPN resistor-equipped transistor in
an SC-75; SOT416 plastic package.
PNP complement: PDTA114TE.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground
3
collector/output
handbook, 4 columns
3
1
2
Top view
3
R1
1
2
MAM347
Fig.1 Simplified outline (SC-75; SOT416) and symbol.
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
PDTC114TE
MARKING
CODE
24
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_O
I_CM
P_tot
h_FE
R1
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
CONDITIONS
open base
T_amb ≤ 25 °C
I_C = 1 mA; V_CE = 5 V
MIN.
−
−
−
−
200
7
TYP.
−
−
−
−
−
10
MAX.
50
100
100
150
−
13
UNIT
V
mA
mA
mW
kΩ
1998 Aug 03
2