PDTA123JT Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA123JT
10³
handbook, halfpage
hFE
10²
MGR753
(1)
(2)
(3)
10
1
−10^−1
−1
−10 _{IC (mA)} −10²
V_CE = −5 V.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
−10³
handbook, halfpage
VCEsat
(mV)
MGR752
−10²
(1)
(2)
(3)
−10
−10^−1
−1
−10 _{IC (mA)} −10²
I_C/I_B = 20.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10⁴
handbook, halfpage
Vi(off)
(mV)
−10³
(1)
(2)
(3)
MGR755
−10⁴
handbook, halfpage
Vi(on)
(mV)
−10³
(1)
(2)
(3)
MGR754
−10²
−10^−2
−10^−1
−1 _{IC (mA)} −10
V_CE = −5 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
−10²
−10^−1
−1
−10 _{IC (mA)} −10²
V_CE = −0.3 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 May 27
4