PDTA123JT Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA123JT
FEATURES
• Built-in bias resistors (typ 2.2 kΩ
and 47 kΩ respectively)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
handbook, 4 columns
3
3
R1
1
R2
2
1
2
Top view
MAM100
Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
PNP resistor-equipped transistor in a
SOT23 plastic package.
NPN complement: PDTC123ET.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Refer to SOT23 standard mounting conditions.
MARKING
TYPE
NUMBER
PDTA123JT
MARKING
CODE⁽¹⁾
∗23
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
MIN.
−
−
−
MAX.
−50
−50
−10
UNIT
V
V
V
−
+5
V
−
−12
V
−
−100
mA
−
−100
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
1999 May 27
2