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PDTA123JT Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor | |||
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Philips Semiconductors
PNP resistor-equipped transistor
Product speciï¬cation
PDTA123JT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 standard mounting conditions.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
IE = 0; VCB = â50 V
IB = 0; VCE = â30 V
IB = 0; VCE = â30 V; Tj = 150 °C
IC = 0; VEB = â5 V
IC = â10 mA; VCE = â5 V
IC = â5 mA; IB = â0.25 mA
IC = â100 µA; VCE = â5 V
IC = â5 mA; VCE = â0.3 V
â
â
â
â
100
â
â
â1.1
1.54
â
â100 nA
â
â1
µA
â
â50 µA
â
â180 µA
â
â
â
â100 mV
â
â0.5 V
â0.75 â
V
2.2 2.86 kâ¦
RR-----21--
resistor ratio
17
21
26
Cc
collector capacitance
IE = ie = 0; VCB = â10 V; f = 1 MHz â
â
3
pF
1999 May 27
3
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