PDTA114EEF Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Preliminary specification
PDTA114EEF
10³
handbook, halfpage
hFE
10²
10
MBK780
(1)
(2)
(3)
−1
handbook, halfpage
VCEsat
(V)
−10^−1
(1)
(2)
(3)
MBK779
1
−10^−1
−1
−10
−10²
IC (mA)
V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
−10^−2
−1
−10
IC (mA)
−10²
I_C/I_B = 20.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
handbook, halfpage
Vi(off)
(V)
(1)
−1
(2)
(3)
MBK782
−10²
handbook, halfpage
Vi(on)
(V)
−10
−1
(1) (2) (3)
MBK781
−10^−_−¹_10−2
−10^−1
−1
−10
IC (mA)
V_CE = −5 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
−10^−1
−10^−1
−1
−10
−10²
IC (mA)
V_CE = −0.3 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 May 21
4