PDTA114EEF Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Preliminary specification
PDTA114EEF
FEATURES
• Power dissipation comparable to SOT23
• Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
• Simplification of circuit design
• Reduces number of components and board space.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground (+)
collector/output
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
DESCRIPTION
PNP resistor-equipped transistor encapsulated in an ultra
small SC-89 (SOT490) plastic SMD package.
NPN complement: PDTC114EEF.
handbook, halfpage ³
3
R1
1
R2
1
2
2
Top view
MAM413
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
MARKING
TYPE NUMBER
PDTA114EEF
MARKING CODE
03
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
1999 May 21
2
MIN.
−
−
−
MAX.
−50
−50
−10
UNIT
V
V
V
−
+10
V
−
−40
V
−
−100
mA
−
−100
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C