PDTA114EEF Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Preliminary specification
PDTA114EEF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient in free air; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MAX.
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
collector cut-off current
I_E = 0; V_CB = −50 V
collector cut-off current
I_B = 0; V_CE = −30 V
I_B = 0; V_CE = −30 V; T_j = 150 °C
emitter cut-off current
I_C = 0; V_EB = −5 V
DC current gain
I_C = −5 mA; V_CE = −5 V
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
input-off voltage
I_C = −100 µA; V_CE = −5 V
input-on voltage
I_C = −10 mA; V_CE = −300 mV
input resistor
−
−
−100 nA
−
−
−1 µA
−
−
−50 µA
−
−
−400 µA
30 −
−
−
−
−150 mV
−
−1.1 −0.8 V
−2.5 −1.8 −
V
7
10
13
kΩ
RR-----21--
resistor ratio
0.8 1
1.2
C_c
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
−
3
pF
1999 May 21
3