PBSS4120T_15 Datasheet, PDF (4/7 Pages) NXP Semiconductors – NPN low VCEsat (BISS) transistor

NXP Semiconductors
20 V, 1 A
NPN low V_CEsat (BISS) transistor
Product data sheet
PBSS4120T
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector-base cut-off current
I_EBO
emitter-base cut-off current
h_FE
DC current gain
V_CEsat
collector-emitter saturation voltage
R_CEsat
V_BEsat
V_BEon
f_T
C_c
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
Note
1. Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
MIN.
V_CB = 30 V; I_E = 0
−
V_CB = 30 V; I_E = 0; T_j = 150 °C −
V_EB = 4 V; I_C = 0
−
V_CE = 2 V; I_C = 100 mA
350
V_CE = 2 V; I_C = 500 mA
300
V_CE = 2 V; I_C = 1 A
280
I_C = 100 mA; I_B = 1 mA
−
I_C = 500 mA; I_B = 50 mA
−
I_C = 750 mA; I_B = 15 mA
−
I_C = 1 A; I_B = 50 mA; note 1
−
I_C = 500 mA; I_B = 50 mA; note 1 −
I_C = 1 A; I_B = 100 mA; note 1 −
V_CE = 2 V; I_C = 100 mA
−
I_C = 100 mA; V_CE = 10 V;
100
f = 100 MHz
V_CB = 10 V; I_E = I_e = 0;
−
f = 1 MHz
TYP.
−
−
−
470
450
420
−
−
−
−
−
−
−
−
−
MAX.
100
50
100
−
−
−
80
110
200
250
220
1.1
0.75
−
20
UNIT
nA
μA
nA
mV
mV
mV
mV
mΩ
V
V
MHz
pF
2003 Sep 29
4