PBSS4120T_15 Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN low VCEsat (BISS) transistor

NXP Semiconductors
20 V, 1 A
NPN low V_CEsat (BISS) transistor
Product data sheet
PBSS4120T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T_stg
T_j
T_amb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
T_amb ≤ 25 °C; note 2
MIN.
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
30
20
5
1
3
300
300
480
+150
150
+150
UNIT
V
V
V
A
A
mA
mW
mW
°C
°C
°C
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
417
260
UNIT
K/W
K/W
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
2003 Sep 29
3