PBSS4120T_15 Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN low VCEsat (BISS) transistor

NXP Semiconductors
20 V, 1 A
NPN low V_CEsat (BISS) transistor
Product data sheet
PBSS4120T
FEATURES
• Low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
• Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low V_CEsat and R_CEsat parameters.
PNP complement: PBSS5120T.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
20
V
1
A
3
A
200 mΩ
PINNING
PIN
1
base
2
emitter
3
collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
MARKING
TYPE NUMBER
PBSS4120T
MARKING CODE⁽¹⁾
*3B
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS4120T
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2003 Sep 29
2