LAE4002S Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LAE4002S
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-c}
PARAMETER
thermal resistance from junction to case
CONDITIONS
T_j = 75 °C
MAX.
200
UNIT
K/W
CHARACTERISTICS
T_case = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_CER
I_EBO
C_cb
C_ce
C_eb
s_fe²
G_AM
h_FE
collector cut-off current
collector cut-off current
emitter cut-off current
collector-base capacitance
collector-base capacitance
collector-base capacitance
forward power gain
maximum available gain
DC current gain
V_CB = 20 V; I_E = 0
V_CB = 40 V; I_E = 0
V_CB = 35 V; R_BE = 220 Ω
I_C = 0 V; V_EB = 1.5 V
I_E = I_C = 0; V_CB = 18 V; V_EB = 1.5 V;
f = 1 MHz
I_E = I_C = 0; V_CE = 18 V; V_EB = 1.5 V;
f = 1 MHz
I_E = I_C = 0; V_EB = 1.0 V; V_CB = 18 V;
f = 1 MHz
I_C = 30 mA; V_CE = 18 V; f = 2 GHz
I_C = 30 mA; V_CE = 18 V; f = 4 GHz
I_C = 30 mA; V_CE = 18 V; f = 2 GHz
I_C = 30 mA; V_CE = 18 V; f = 3 GHz
V_CE = 5 V; I_C = 30 mA
MIN.
−
−
−
−
−
TYP.
−
−
−
−
0.3
MAX. UNIT
100 nA
150 µA
500 µA
50
nA
−
pF
−
0.55 −
pF
−
1.8 −
pF
−
8.8 −
dB
−
2.8 −
dB
−
14
−
dB
−
11
−
dB
15
−
150
1997 Feb 18
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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