LAE4002S Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CER
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
R_BE = 220 Ω
open base
open collector
T_case ≤ 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.1 mm from ceramic.
Product specification
LAE4002S
MIN. MAX. UNIT
−
40 V
−
35 V
−
16 V
−
3
V
−
90 mA
−
625 mW
−65 +200 °C
−
200 °C
−
235 °C
10²
handbook, halfpage
IC
(mA)
10
MGD998
(1)
1
1
10
VCE (V)
10²
T_case ≤ 75 °C; R_BE < 220Ω.
(I) Second breakdown limit (independent of temperature).
Fig.2 DC SOAR.
800
handbook, halfpage
Ptot
(mW)
600
MGD997
400
200
0
0
50
100
150
200
Tcase (^oC)
Fig.3 Power derating curve.
1997 Feb 18
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
3