LAE4002S Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LAE4002S
FEATURES
• Diffused emitter ballasting resistors
• Self-aligned process entirely ion implanted and gold
sandwich metallization
• Optimum temperature profile
• Excellent performance and reliability.
PINNING - SOT100
PIN
1 collector
2 emitter
3 base
4 emitter
DESCRIPTION
APPLICATIONS
Common emitter class A linear power amplifiers up to
4 GHz.
handbook, halfpage
3
DESCRIPTION
2
NPN silicon planar epitaxial microwave power transistor in
a SOT100 metal ceramic package with emitter connected
to the metallized lid. A miniature ceramic encapsulation is
used for compatibility with stripline microwave circuits.
c
4
b
e
1
MAM312
Marking code: R9.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance up to T_case = 25 °C in a common emitter class A circuit.
MODE OF
OPERATION
f
V_CE
(GHz)
(V)
I_C
(mA)
P_L1
(mW)
CW linear amplifier
4
18
30
>126
G_po
(dB)
>7.5
Z_i
(Ω)
typ. 4 + j23
Z_L
(Ω)
typ. 6.5 + j32
1997 Feb 18
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
2