J111 Datasheet, PDF (4/6 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Philips Semiconductors
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS
T_j = 25 °C unless otherwise specified
Input capacitance
V_DS = 0; −V_GS = 10 V; f = 1 MHz
C_is
V_DS = −V_GS = 0; f = 1 MHz
C_is
Feedback capacitance
V_DS = 0; −V_GS = 10 V; f = 1 MHz
C_rs
Switching times
test conditions
V_DD = 10 V; V_GS = 0 to V_GSoff
−V_{GS off} = 12 V; R_L = 750 Ω for J111
−V_{GS off} = 7 V; R_L = 1550 Ω for J112
−V_{GS off} = 5 V; R_L = 3150 Ω for J113
Rise time
t_r
Turn-on time
t_on
Fall time
t_f
Turn-off time
t_off
Product specification
J111; J112; J113
typ.
typ.
max.
typ.
6 pF
22 pF
28 pF
3 pF
typ.
6 ns
typ.
13 ns
typ.
15 ns
typ.
35 ns
ok, halfpage
VDD
10 nF
50 Ω
10 µF
50 Ω
1 µF
RL
DUT
SAMPLING
SCOPE
50 Ω
MBK289
VGS = 0 V
Vi
VGS _off
10%
90%
90%
Vo
10%
toff
tf
ton
tr
MBK288
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
July 1993
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