J111 Datasheet, PDF (3/6 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
J111; J112; J113
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate forward current (DC)
Total power dissipation
±V_DS
−V_GSO
−V_GDO
I_G
max.
max.
max.
max.
up to T_amb = 50 °C
Storage temperature range
Junction temperature
P_tot
max.
T_stg
T_j
max.
THERMAL RESISTANCE
From junction to ambient in free air
R_{th j-a}
=
STATIC CHARACTERISTICS
T_j = 25 °C unless otherwise specified
Gate reverse current
−V_GS = 15 V; V_DS = 0
Drain cut-off current
V_DS = 5 V; −V_GS = 10 V
Drain saturation current
V_DS = 15 V; V_GS = 0
Gate-source breakdown voltage
−I_G = 1 µA; V_DS = 0
Gate-source cut-off voltage
V_DS = 5 V; I_D = 1 µA
Drain-source on-state resistance
V_DS = 0.1 V; V_GS = 0
−I_GSS
−I_DSX
I_DSS
−V_(BR)GSS
−V_{GS off}
R_DSon
max.
max.
min.
min.
min.
max.
max.
J111
1
1
20
40
3
10
30
40 V
40 V
40 V
50 mA
400 mW
−65 to + 150 °C
150 °C
250 K/W
J112 J113
1
1 nA
1
1 nA
5
2 mA
40
40 V
1
0.5 V
5
3V
50
100 Ω
July 1993
3