J111 Datasheet, PDF (2/6 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
• High speed switching
• Interchangeability of drain and
source connections
• Low R_{DS on} at zero gate voltage
PINNING
1 = gate
2 = source
3 = drain
Note: Drain and source are
interchangeable.
handbook, half¹pa₂ge
3
d
g
s
MAM042
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA
Drain-source voltage
Drain current
V_DS = 15 V; V_GS = 0
Total power dissipation
up to T_amb = 50 °C
Gate-source cut-off voltage
V_DS = 5 V; I_D = 1 µA
Drain-source on-state resistance
V_DS = 0.1 V; V_GS = 0
±V_DS
max.
I_DSS
min.
P_tot
−V_{GS off}
max.
min.
max.
R_{DS on}
max.
J111
40
J112
40
J113
40 V
20
5
2 mA
400
400
3
1
10
5
400 mW
0.5 V
3V
30
50
100 Ω
July 1993
2