BUK7528-100A Datasheet, PDF (4/9 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7528-100A
BUK7628-100A
180
ID/A160
140
VGS/V =
20.0
10.0
13.5
9.0
8.0
7.5
120
7.0
100
6.5
80
6.0
60
5.5
40
5.0
20
4.5
0
0
2
4
6
8
10
VDS/V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON)/mOhm
65
5.5
60
6.0
55
6.5
50
45
40
7.0
7.5
35
8.0
30
10.0
25
20
15
5
25
45
65
85
105
125
ID/A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); paramter V_GS
RDS(ON) Ohm
31
29
27
25
23
21
19
17
15
5
7
9
11
13
15
VGS/V
Fig.7. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(V_GS); conditions: I_D = 25 A;
100
ID/A ₉₀
80
70
60
50
40
30
Tj/C= 175^oC
20
25^oC
10
0
0
2
4
6
8
VGS/V
Fig.8. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
45
gfs/S
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
ID/A
Fig.9. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
a
2
30V TrenchMOS
1.5
1
0.5
0
-100
-50
0
50
100
150
200
Tj / C
Fig.10. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 25 A; V_GS = 5 V
March 2000
4
Rev 1.000