BUK7528-100A Datasheet, PDF (3/9 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7528-100A
BUK7628-100A
AVALANCHE LIMITING VALUE
SYMBOL
W_DSS1
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I_D = 30 A; V_DD ≤ 25 V;
V_GS = 5 V; R_GS = 50 Ω; T_mb = 25 ˚C
MIN. TYP. MAX. UNIT
-
-
45 mJ
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
110
100
Normalised Current Derating
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 5 V
1000
ID/A
RDS(ON)=VDS/ID
100
tp =
1us
10us
100us
10
1ms
DC
10ms
100ms
1
1
10
100
1000
VSD/V
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth/(K/W)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
0.001
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
1 For maximum permissible repetive avalanche current see fig.18.
March 2000
3
Rev 1.000