BUK7528-100A Datasheet, PDF (2/9 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7528-100A
BUK7628-100A
STATIC CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
I_DSS
I_GSS
R_DS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
V_GS = 0 V; I_D = 0.25 mA;
T_j = -55˚C
V_DS = V_GS; I_D = 1 mA
T_j = 175˚C
T_j = -55˚C
V_DS = 100 V; V_GS = 0 V;
T_j = 175˚C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D = 25 A
T_j = 175˚C
MIN.
100
89
2
1
-
-
-
-
-
-
TYP.
-
-
3
-
-
0.05
-
2
20
-
MAX.
-
-
4
-
4.4
10
500
100
28
76
UNIT
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T_mb = 25˚C unless otherwise specified
SYMBOL PARAMETER
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
t_{d on}
Turn-on delay time
t_r
Turn-on rise time
t_{d off}
Turn-off delay time
t_f
Turn-off fall time
L_d
Internal drain inductance
L_d
Internal drain inductance
L_d
Internal drain inductance
L_s
Internal source inductance
CONDITIONS
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_DD = 30 V; R_load =1.2Ω;
V_GS = 10 V; R_G = 10 Ω
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
2320
315
187
15
70
83
45
4.5
3.5
2.5
7.5
MAX.
3100
378
256
23
105
116
63
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
-
nH
-
nH
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_DR
Continuous reverse drain
current
I_DRM
Pulsed reverse drain current
V_SD
Diode forward voltage
I_F = 25 A; V_GS = 0 V
I_F = 47 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 47 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge
V_GS = -10 V; V_R = 30 V
MIN. TYP. MAX. UNIT
-
-
47
A
-
- 187 A
- 0.85 1.2 V
-
1.1
-
V
-
66
-
ns
- 0.24 -
µC
March 2000
2
Rev 1.000