BUK7514-55A Datasheet, PDF (4/9 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7514-55A
BUK7614-55A
200
180
ID/A
160
140
120
100
80
60
40
20
0
0
20.0
2
15.0
VGS/V =
4
6
8
VDS/V
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
10
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON)/mOhm
30
5.5
6.0
28
26
24
22
20
6.5
18
7.0
16
7.5
14
8.0
12
10.0
10
5
10 15 20 25 30 35 40 45 50
ID/A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
RDS(ON) Ohm
17
15
13
11
9
7
5
6
8
10
12
14
16
18
20
VGS/V
Fig.7. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(V_GS); conditions: I_D = 25 A;
100
ID/A ₉₀
80
70
60
50
40
30
20
10
0
0
Tj/C= 175^oC
25^oC
2
4
6
VGS/V
8
10
Fig.8. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
30
gfs/S
25
20
15
10
5
0
0
20
40
60
80
100
ID/A
Fig.9. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
a
2
30V TrenchMOS
1.5
1
0.5
0
-100
-50
0
50
100
150
200
Tj / C
Fig.10. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 25 A; V_GS = 5 V
July 2000
4
Rev 1.000