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| BUK7514-55A Datasheet, PDF (2/9 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
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Philips Semiconductors
TrenchMOSï transistor
Standard level FET
Product specification
BUK7514-55A
BUK7614-55A
STATIC CHARACTERISTICS
Tj= 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55ËC
VDS = VGS; ID = 1 mA
Tj = 175ËC
Tj = -55ËC
VDS = 55 V; VGS = 0 V;
Tj = 175ËC
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A
Tj = 175ËC
MIN.
55
50
2
1
-
-
-
-
-
-
TYP.
-
-
3
-
-
0.05
-
2
12
-
MAX.
-
-
4
-
4.4
10
500
100
14
28
UNIT
V
V
V
V
V
µA
µA
nA
mâ¦
mâ¦
DYNAMIC CHARACTERISTICS
Tmb = 25ËC unless otherwise specified
SYMBOL PARAMETER
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; Rload =1.2â¦;
VGS = 5 V; RG = 10 â¦
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
1848
421
231
17
79
57
51
4.5
3.5
2.5
7.5
MAX.
2464
506
317
26
119
80
71
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
-
nH
-
nH
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 73 A; VGS = 0 V
trr
Reverse recovery time
IF = 73 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
73
A
-
- 266 A
- 0.85 1.2 V
-
1.1
-
V
-
54
-
ns
- 0.12 -
µC
July 2000
2
Rev 1.000
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