BUK7511-55B Datasheet, PDF (4/16 Pages) NXP Semiconductors – TRENCHMOS-TM STANDARD LEVEL FET

Philips Semiconductors
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-mb) thermal resistance from junction to mounting Figure 4
base
R_th(j-a)
thermal resistance from junction to ambient
SOT78 (TO-220AB)
vertical in still air
SOT404 (D²-PAK)
minimum footprint; mounted on a
printed-circuit board
SOT226 (I²-PAK)
vertical in still air
5.1 Transient thermal impedance
Min Typ Max Unit
- - 0.95 K/W
- 60 - K/W
- 50 - K/W
- 60 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nn45
P
δ
=
tp
T
tp
t
T
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12053
Product data
Rev. 02 — 11 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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