BUK7511-55B Datasheet, PDF (2/16 Pages) NXP Semiconductors – TRENCHMOS-TM STANDARD LEVEL FET

Philips Semiconductors
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
BUK7511-55B
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
BUK7611-55B
D²-PAK
Plastic single-ended surface mounted package (Philips version of D²-PAK); SOT404
3 leads (one lead cropped)
BUK7E11-55B
I²-PAK
Plastic single-ended package (Philips version of I²-PAK); low-profile 3 lead SOT226
TO-220AB
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_DR
reverse drain current (DC)
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
T_mb = 25 °C; Figure 1
T_mb = 25 °C
I_DRM
peak reverse drain current
Avalanche ruggedness
E_DS(AL)S non-repetitive drain-source avalanche
energy
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
unclamped inductive load; I_D = 75 A;
V_DS ≤ 55 V; V_GS = 10 V; R_GS = 50 Ω;
starting T_mb = 25 °C
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min
-
-
-
[1] _-
[2] _-
[1] _-
-
-
−55
−55
[1] _-
[2] _-
-
-
Max Unit
55
V
55
V
±20
V
84
A
75
A
59
A
338
A
157
W
+175 °C
+175 °C
84
A
75
A
338
A
173
mJ
9397 750 12053
Product data
Rev. 02 — 11 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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