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BUK7510-100B_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
103
ID
(A)
102
Limit RDSon = VDS/ ID
10
Capped at 75 A due to package
DC
1
10-1
1
10
tp =10 μ s
100 μ s
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1 ms
10 ms
100 ms
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
-
-
0.5 K/W
-
60 -
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10−1
10−2
0.2
0.1
0.05
0.02
03ng69
P
δ = tp
T
Single Shot
10−3
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7510-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 January 2012
© NXP B.V. 2012. All rights reserved.
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