BUK7510-100B_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7510-100B
N-channel TrenchMOS standard level FET
Rev. 4 — 4 January 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V, 24 V and 42 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C;
see Figure 1;
see Figure 3
T_mb = 25 °C;
see Figure 2
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C;
see Figure 11;
see Figure 12
Min Typ Max Unit
- - 100 V
[1] _-
-
75 A
- - 300 W
-
8.6 10 mΩ