BUK7510-100B_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 1;
see Figure 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
see Figure 3
T_mb = 25 °C; see Figure 2
T_mb = 25 °C
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
I_D = 75 A; V_sup ≤ 100 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min
-
-
-20
[1] _-
[2] _-
[2] _-
-
Max Unit
100 V
100 V
20 V
110 A
75 A
75 A
438 A
-
300 W
-55 175 °C
-55 175 °C
[1] _-
[2] _-
-
110 A
75 A
438 A
-
629 mJ
120
I_D
(A)
80
03ng70
Capped at 75 A due to package
120
P_der
(%)
80
03na19
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7510-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 January 2012
© NXP B.V. 2012. All rights reserved.
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