BUK553-48C Datasheet, PDF (4/9 Pages) NXP Semiconductors – PowerMOS transistor Voltage clamped logic level FET

Philips Semiconductors
PowerMOS transistor
Voltage clamped logic level FET
Product specification
BUK553-48C
ID / A
40
10
30
BUK5Y3-48C
VGS / V = 5
4.5
4
20
3.5
10
3
2.5
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
BUK5Y3-48C
0.5
2.5 3
3.5
VGS / V = 4
0.4
4.5
0.3
5
0.2
0.1
10
0
0
Fig.6.
10
20
30
40
VDS / V
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
V(CL)DSR / V
51
BUK5Y3-48C
50
49
48
47
46
Tmb / degC =
45
150
44
25
-55
43
0
2
4
6
8
10
12
ID / A
Fig.7. Typical clamping voltage
V_(CL)DSR = f(I_D) ; conditions: R_G = 10 kΩ
ID / A
40
BUK5Y3-48C
30
20
10
Tmb / degC =
150
25
-55
0
0
1
2
3
4
5
6
7
VGS / V
Fig.8. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V.
gfs / S
20
BUK5Y3-48C
15
10
5
Tmb / degC =
150
25
-55
0
0
10
20
30
40
Id / A
Fig.9. Typical transconductance.
g_fs = f(I_D); conditions: V_DS = 25 V
V(CL)DSR / V
58
56
54
BUK5Y3-48C
Tmb / degC =
150
25
-55
52
50
48
46
44
1
2
5
10
20
RG / kOhm
Fig.10. Typical clamping voltgage
V_(CL)DSR = f(R_G) ; conditions: I_D = 10 A.
August 1994
4
Rev 1.000