BUK553-48C Datasheet, PDF (2/9 Pages) NXP Semiconductors – PowerMOS transistor Voltage clamped logic level FET

Philips Semiconductors
PowerMOS transistor
Voltage clamped logic level FET
Product specification
BUK553-48C
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DG
V_GS(TO)
V_GS(ON)
I_DSS
I_GSS
R_DS(ON)
Drain-gate zener voltage
Gate threshold voltage
Gate voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
0.2 < -I_G < 0.4 mA;
-55˚C < T_j < 150˚C
V_DS = V_GS; I_D = 1 mA
V_DS = 10 V; I_D = 10 A;
-55˚C < T_j < 150˚C
V_DS = 30 V; V_GS = 0 V; T_j =150 ˚C
V_GS = ±15 V; V_DS = 0 V; T_j =150 ˚C
V_GS = 5 V; I_D = 10 A
MIN. TYP. MAX. UNIT
38 45 54
V
1.0 1.5 2.0 V
2.0 3.1 4.0 V
- 0.01 1.0 mA
-
0.1 10 µA
-
65 85 mΩ
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V_(CL)DSR
Drain source clamp voltage
(peak value)
g_fs
Forward transconductance
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
t_{d on}
Turn-on delay time
t_r
Turn-on rise time
t_{d off}
Turn-off delay time
t_f
Turn-off fall time
L_d
Internal drain inductance
L_s
Internal source inductance
CONDITIONS
R_G = 10 kΩ; I_D = 10 A;
-55 < T_j < 150˚C; Inductive load.
V_DS = 25 V; I_D = 10 A
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_DD = 12 V; I_D = 5 A;
V_GS = 5 V; R_G = 10 kΩ;
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN. TYP. MAX. UNIT
40 48 58
V
7
12
-
S
- 550 825 pF
- 240 350 pF
- 100 160 pF
-
3.5
-
µs
-
22
-
µs
-
16
-
µs
-
18
-
µs
-
4.5
-
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_DR
Continuous reverse drain
-
current
I_DRM
Pulsed reverse drain current -
V_SD
Diode forward voltage
I_F = 21 A ; V_GS = 0 V
MIN. TYP. MAX. UNIT
-
-
21
A
-
-
84
A
-
1.3 1.7 V
August 1994
2
Rev 1.000