BUK107-50GL Datasheet, PDF (4/10 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET

Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK107-50GL
SWITCHING CHARACTERISTICS
T_amb = 25 ˚C; resistive load R_L = 50 Ω; adjust V_DD to obtain I_D = 250 mA; refer to test circuit and waveforms
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
t_{d on}
Turn-on delay time
V_IS = 0 V to V_IS = 5 V
t_r
Rise time
t_{d off}
Turn-off delay time
V_IS = 5 V to V_IS = 0 V
t_f
Fall time
T_amb = 25 ˚C; resistive load R_L = 10 kΩ; V_DD = 12.5 V
-
0.9
-
µs
-
3.5
-
µs
-
2.8
-
µs
-
9.0
-
µs
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
t_{d on}
Turn-on delay time
t_r
Rise time
t_{d off}
Turn-off delay time
t_f
Fall time
V_IS = 0 V to V_IS = 5 V
V_IS = 5 V to V_IS = 0 V
-
0.8
-
µs
-
2.3
-
µs
-
7.5
-
µs
- 12.5 -
µs
April 1998
4
Rev 1.200