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BUK107-50GL Datasheet, PDF (2/10 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK107-50GL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
VDS
Continuous drain source voltage1
ID
Continuous drain current2
II
Continuous input current
IIRM
Non-repetitive peak input current
PD
Total power dissipation
Tstg
Storage temperature
Tj
Continuous junction temperature
CONDITIONS
-
-
clamping
tp ≤ 1 ms
Tamb = 25 ˚C
-
normal operation3
MIN.
-
-
-
-
-
-55
-
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
50
self limiting
3
10
1.8
150
150
UNIT
V
A
mA
mA
W
˚C
˚C
MIN.
-
MAX.
2
UNIT
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
EDSM
EDRM
Non-repetitive clamping energy
Repetitive clamping energy
Tb ≤ 25 ˚C; IDM < ID(lim);
inductive load
Tb ≤ 75 ˚C; IDM = 50 mA;
f = 250 Hz
-
100
mJ
-
4
mJ
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads.
Overload protection operates by means of drain current limiting and activating the overtemperature protection.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VDDP
Protected drain source supply voltage VIS = 5 V
VIS = 4 V
-
35
V
-
16
V
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when there is an overload fault condition.
It remains latched off until reset by the input.
SYMBOL PARAMETER
CONDITIONS
Overload protection
ID(lim)
Tj(TO)
Drain current limiting
VIS = 5 V
Overtemperature protection only in drain current limiting
Threshold junction temperature VIS = 5 V
MIN. TYP. MAX. UNIT
0.5 1.1 1.5 A
100 130 160 ˚C
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3 Not in an overload condition with drain current limiting.
April 1998
2
Rev 1.200