BU508AW Datasheet, PDF (4/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
VCESAT/V
10
BU508AD
1
IC = 6A
IC = 4.5A
0.1
0.1
1 _IB/A
IC = 3A
10
Fig.9. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
10 ^{Zth K/W}
bu508aw
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0
PD
tp
D
=
tp
T
0.001
1.0E-07
1.0E-5
1.0E-3
t/s
T
t
1.0E-1
1.0E+1
Fig.10. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
Product specification
BU508AW
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_hs)
July 1998
Fig.12. Forward bias safe operating area. T_mb < 25˚C
(1) P_{tot max} line.
(2) Second-breakdown limit (independent of
temperature).
I Region of permissible DC operation.
II Permissible extension for repetitive operation.
4
Rev 1.200