BU508AW Datasheet, PDF (3/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508AW
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.3. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
1mH
IBend
-VBB
LB
D.U.T.
BY228
12nF
Fig.5. Switching times test circuit.
h FE
100
BU508AD
10
10.1
Fig.6.
1
10
IC/A
Typical DC current gain. h_FE = f (I_C)
parameter V_CE
VCESAT / V
1
0.9
BU508AD
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
IC / A ¹⁰
Fig.7. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBESAT / V
1.4
BU508AD
1.2
1
IC = 4.5A
IC = 3A
0.8
IC = 6A
0.6
0
1
2
3 _{IB / A} 4
Fig.8. Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
July 1998
3
Rev 1.200