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| BU508AW Datasheet, PDF (2/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508AW
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 1
ICES
IEBO
VCEOsus
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 6.0 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4.5 A; IB = 1.6 A
IC = 4.5 A; IB = 2.0 A
IC = 100 mA; VCE = 5 V
MIN.
-
-
-
700
-
-
6
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
10 mA
-
-
V
-
1.0
V
-
1.1
V
13 30
-
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
fT
Transition frequency at f = 5 MHz
CC
Collector capacitance at f = 1MHz
Switching times (16 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IC = 0.1 A;VCE = 5 V
VCB = 10 V
ICsat = 4.5 A;Lc= 1 mH;Cfb = 4 nF
IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
TYP.
7
125
MAX.
-
-
UNIT
MHz
pF
6.5
-
µs
0.7
-
µs
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
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