BU4530AL Datasheet, PDF (4/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4530AL
10 ^{VCEsat / V}
- - -Tj = 85 C
Tj = 25 C
1
0.1
IC / IB = 5
0.01
0.1
1
10
IC / A
100
Fig.9. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
10 ^{ts/tf / us}
8
6
4
2
0
0
0.5
1
1.5
2
2.5 _{IB / A} 3
Fig.10. Typical collector storage and fall time.
I_C =9 A; T_j = 85˚C; f = 32kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C}
Zth / (K/W)
10
BU4530AL
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
PD
tp
D
=
tp
T
0.001
1E-07
1E-05
1E-03
t/s
T
1E-01
t
1E+01
Fig.12. Transient thermal impedance.
10 ^{Ic(sat) (A)}
8
6
4
2
0
0
20
40
60
80
100
frequency (kHz)
Fig.13. I_Csat during normal running vs. frequency of
operation for optimum performance
April 1999
4
Rev 1.100