BU4530AL Datasheet, PDF (2/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4530AL
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
35
MAX.
1.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ¹
I_CES
BV_EBO
V_CEOsust
Base-emitter breakdown voltage
Collector-emitter breakdown voltage
V_CEsat
V_BEsat
h_FE
h_FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
I_B = 1 mA
I_B = 0 A;I_C = 100 mA;
L = 25 mH
I_C = 10 A; I_B = 2.22 A
I_C = 10 A; I_B = 2.22 A
I_C = 1 A; V_CE = 5 V
I_C = 10 A; V_CE = 5 V
MIN.
-
-
7.5
800
-
0.83
-
4.8
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
12.8 -
V
V
-
3.0
V
0.92 1.01 V
12
-
6.6 8.5
DYNAMIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (32 kHz line
deflection dynamic test circuit).
t_s
Turn-off storage time
t_f
Turn-off fall time
Switching times (90 kHz line
deflection dynamic test circuit).
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_Csat = 9.0 A; I_B1 = 1.8 A; (I_B2 = -4.5 A)
I_Csat = 8 A;I_B1 = 1.6 A; (I_B2 = -4.0 A)
TYP. MAX. UNIT
3.0 4.0 µs
0.20 0.26 µs
2
-
µs
0.12 -
µs
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for V_CEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V_CEOsust.
1 Measured with half sine-wave voltage (curve tracer).
April 1999
2
Rev 1.100