BU4530AL Datasheet, PDF (3/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
10us
13us
32us
IBend
t
t
Fig.3. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IB1
10 %
tf
t
t
- IB2
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
T.U.T.
Cfb
Fig.5. Switching times test circuit.
100 ^hFE
VCE = 1V
10
Product specification
BU4530AL
- - -Tj = 85 C
Tj = 25 C
1
0.01
0.1
1
10 _{IC / A}
100
Fig.6. High and low DC current gain.
100 ^hFE
VCE = 5V
- - -Tj = 85 C
Tj = 25 C
10
1
0.01
0.1
1
10 _{IC / A}
100
Fig.7. High and low DC current gain.
1 ^{VBEsat /V}
- - -Ths = 85 C
Ths = 25 C
0.9
0.8
IC = 10 A
IC = 8 A
0.7
0.6
0
1
2
3
IB / A
4
Fig.8. Typical base-emitter saturation voltage.
April 1999
3
Rev 1.100