BU4506AX Datasheet, PDF (4/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
VBESAT / V
1.2
1.1
Ths = 25 C
Ths = 85 C
1
0.9
IC = 3 A
0.8
0.7
0.6
0
1
2
3 _{IB / A} 4
Fig.9. Typical base-emitter saturation voltage.
ts/tf/ us
10
8
ICsat = 3 A
Ths = 85 C
Freq = 16 kHz
6
4
2
0
0
0.5
1
1.5 _{IB / A} 2
Fig.10. Typical collector storage and fall time.
I_C =3 A; T_j = 85˚C; f = 16kHz
Product specification
BU4506AX
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C}
`^{Zth (K/W)}
10
BU4506DF/DX
D = 0.5
1 0.2
0.1
0.05
0.1 0.02
D=0
0.01
P_{D tp D = tp/T}
0.001
1E-06
1E-05
1E-04
1E-03 1E-02
t/s
T
t
1E-01 1E+00 1E+01
Fig.12. Transient thermal impedance.
July 1999
4
Rev 1.000