BU4506AX Datasheet, PDF (3/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506AX
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IB1
t
IB2
t
Fig.3. Switching times waveforms (16 kHz).
ICsat
90 %
IC
ts
IB
IB1
10 %
tf
t
t
- IB2
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
T.U.T.
Cfb
Fig.5. Switching times test circuit.
hFE
100
VCE = 1 V
10
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
IC / A 10
Fig.6. High and low DC current gain.
100 ^hFE
VCE = 5 V
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
IC / A 10
Fig.7. High and low DC current gain.
VCESAT / V
1
0.8
Ths = 25 C
Ths = 85 C
0.6
0.4
0.2
0
0.1
1
IC / A 10
Fig.8. Typical collector-emitter saturation voltage.
July 1999
3
Rev 1.000